Average Co-Inventor Count = 3.26
ph-index = 2
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Globalfoundries Singapore Pte. Ltd. (25 from 1,016 patents)
2. Chartered Semiconductor Manufacturing Ltd (corporation) (1 from 962 patents)
3. Globalfoundries U.S. Inc. (1 from 927 patents)
27 patents:
1. 12336220 - Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells
2. 12176395 - Structures for a laterally-diffused metal-oxide-semiconductor transistor
3. 11955514 - Field-effect transistors with a gate structure in a dual-depth trench isolation structure
4. 11862693 - Semiconductor devices including a drain captive structure having an air gap and methods of forming the same
5. 11791392 - Extended-drain metal-oxide-semiconductor devices with a notched gate electrode
6. 11791379 - Galvanic isolation using isolation break between redistribution layer electrodes
7. 11764273 - Semiconductor structures for galvanic isolation
8. 11502193 - Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layer
9. 11469169 - High voltage decoupling capacitor and integration methods
10. 11456306 - Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemes
11. 11282953 - Transistor devices and methods of forming a transistor device
12. 11257949 - Transistor devices and methods of forming transistor devices
13. 10892317 - Power trench capacitor compatible with deep trench isolation process
14. 10529819 - High voltage Schottky diode and manufacturing method thereof
15. 10510831 - Low on resistance high voltage metal oxide semiconductor transistor