The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Jun. 08, 2021
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 29/401 (2013.01); H01L 29/42368 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract
Structures for an extended-drain metal-oxide-semiconductor device and methods of forming a structure for an extended-drain metal-oxide-semiconductor device. The structure includes a substrate, a source region and a drain region in the substrate, a buffer dielectric layer positioned on the substrate adjacent to the drain region, and a gate electrode laterally positioned between the source region and the drain region. The gate electrode includes a portion that overlaps with the buffer dielectric layer, and the portion of the gate electrode includes notches.