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For the Inventor, By the Inventor

Singapore, Singapore

Bong Woong Mun

USPTO Granted Patents = 16 

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:

goldMedal15 out of 1,021 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal1 out of 945 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2022-2025

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16 patents (USPTO):Explore Patents
1. 12408373 - Device with three dimensional channel (2025-09-02),
2. 12336220 - Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells (2025-06-17),
3. 12289913 - Device with metal field plate extension (2025-04-29),
4. 12191351 - Laterally-diffused metal-oxide-semiconductor devices with an air gap (2025-01-07),
5. 11996441 - Semiconductor device for high voltage applications (2024-05-28),
6. 11955514 - Field-effect transistors with a gate structure in a dual-depth trench isolation structure (2024-04-09),
7. 11862693 - Semiconductor devices including a drain captive structure having an air gap and methods of forming the same (2024-01-02),
8. 11791392 - Extended-drain metal-oxide-semiconductor devices with a notched gate electrode (2023-10-17),
9. 11791379 - Galvanic isolation using isolation break between redistribution layer electrodes (2023-10-17),
10. 11764273 - Semiconductor structures for galvanic isolation (2023-09-19),
11. 11658240 - Semiconductor transistors on multi-layered substrates (2023-05-23),
12. 11538910 - Field-effect transistors of semiconductor devices (2022-12-27),
13. 11502193 - Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layer (2022-11-15),
14. 11469169 - High voltage decoupling capacitor and integration methods (2022-10-11),
15. 11456306 - Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemes (2022-09-27),

Title: Bong Woong Mun: Innovator in Semiconductor Technology

Introduction

Bong Woong Mun is a prominent inventor based in Singapore, known for his significant contributions to semiconductor technology. With a total of 16 patents to his name, Mun has made remarkable advancements in the field, particularly in the design and manufacturing of semiconductor devices.

Latest Patents

Among his latest patents is a device featuring a three-dimensional channel. This invention relates to semiconductor structures and outlines methods of manufacture. The structure includes a drift region within a semiconductor substrate, a shallow trench isolation structure within the drift region, and a gate structure that extends to the upper surface of the semiconductor substrate adjacent to the drift region. Another notable patent involves extended-drain metal-oxide-semiconductor devices, which details structures and methods for forming such devices. This invention includes a semiconductor substrate, a body well, a source region, a drain well, a drain region, and a gate electrode positioned between the source and drain regions.

Career Highlights

Bong Woong Mun has worked with leading companies in the semiconductor industry, including GlobalFoundries Singapore Pte. Ltd. and GlobalFoundries U.S. Inc. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Throughout his career, Mun has collaborated with notable professionals in the field, including Jeoung Mo Koo and Upinder Singh. These collaborations have further enhanced his work and contributed to the development of advanced semiconductor solutions.

Conclusion

Bong Woong Mun's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the future of semiconductor devices and manufacturing processes.

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