The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
May. 14, 2024
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Bong Woong Mun, Singapore, SG;
Jeffrey B. Johnson, North Hero, VT (US);
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming same. The structure comprises a semiconductor substrate including a trench, a source and a drain in the semiconductor substrate, a dielectric layer inside the trench, and a gate in the dielectric layer. The trench has a first sidewall and a second sidewall, the source is adjacent to the first sidewall of the trench, the drain is adjacent to the second sidewall of the trench, and the gate is laterally between the first sidewall of the trench and the second sidewall of the trench. The structure further comprises an air gap in the dielectric layer. The air gap is below the gate, and the air gap is laterally between the first sidewall of the trench and the second sidewall of the trench.