The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Jul. 03, 2023
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventor:
Bong Woong Mun, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/655 (2025.01); H10D 30/0285 (2025.01); H10D 62/102 (2025.01); H10D 62/116 (2025.01); H10D 64/111 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to metal-oxide semiconductor transistors and methods of manufacture. The structure includes: a substrate comprising a drift region and a body region; a gate structure between the drift region and the body region; an insulator material over the gate structure, the drift region and the body region; and an air gap within the insulator material and extending into the drift region.