Singapore, Singapore

Upinder Singh

This inventor holds 8 USPTO granted patents and 1 published patent application. Top assignees: Globalfoundries Singapore Pte. Ltd., Globalfoundries Inc.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Upinder Singh. Retrieved from https://idiyas.com/inventor/upinder-singh-sgasd0qs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 87.5

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2016-2025

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8 patents (USPTO):Explore Patents

Title: Innovations by Upinder Singh: Pioneering Advances in Metal-Oxide-Semiconductor Technology

Introduction

Upinder Singh is a prominent inventor based in Singapore, known for his significant contributions to the field of semiconductor technology. With a total of seven patents to his name, he has made strides in developing advanced structures for metal-oxide-semiconductor devices, which are essential for modern electronics.

Latest Patents

Among Upinder Singh's latest innovations are two noteworthy patents related to structures for laterally-diffused metal-oxide-semiconductor transistors. The first patent details methods of forming a structure for a laterally-diffused metal-oxide-semiconductor device. This structure features a drain and a source integrated into a semiconductor substrate, with the source having defined terminating ends and a distinct length. The patent also describes a shallow trench isolation region that encircles the drain, along with a gate that encompasses both the shallow trench isolation region and the drain. The design emphasizes that the length of the source region is substantially equal to the gate's length, optimizing performance.

The second patent focuses on extended-drain metal-oxide-semiconductor devices that include a notched gate electrode. This innovative structure comprises a substrate with adjacent source and drain regions, complemented by a buffer dielectric layer and a laterally positioned gate electrode. The gate electrode's unique feature is its overlapping portion with the buffer dielectric layer, which incorporates notches that enhance device functionality.

Career Highlights

Upinder Singh has built his career at notable companies in the semiconductor industry, particularly at GlobalFoundries Singapore Pte. Ltd. and GlobalFoundries Inc. His work in these organizations has been instrumental in advancing semiconductor technologies, making him a valuable asset in the field.

Collaborations

Throughout his career, Upinder has collaborated with esteemed colleagues, including Jeoung Mo Koo and Lin Wei. These partnerships have likely contributed to his innovative projects and the development of groundbreaking technologies that benefit the broader electronics sector.

Conclusion

Upinder Singh's contributions to semiconductor technology exemplify the spirit of innovation that drives the industry forward. His patents not only reflect his expertise but also pave the way for improved electronic device performance. With an impressive portfolio and strategic collaborations, Upinder continues to make significant impacts within the realm of metal-oxide-semiconductor devices, ensuring he remains a key figure in this dynamic field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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