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For the Inventor, By the Inventor

Singapore, Singapore

Raj Verma Purakh

This inventor holds 15 USPTO granted patents. Top assignee: Globalfoundries Singapore Pte. Ltd.. Active years: 2017-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Raj Verma Purakh. Retrieved from https://idiyas.com/inventor/raj-verma-purakh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 73.3

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:

goldMedal15 out of 1,062 
 
Globalfoundries Singapore Pte. Ltd.
 patents

Years Active: 2017-2020

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15 patents (USPTO):Explore Patents
1. 10797159 - Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOS (2020-10-06),
2. 10680099 - Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance (2020-06-09),
3. 10529819 - High voltage Schottky diode and manufacturing method thereof (2020-01-07),
4. 10529738 - Integrated circuits with selectively strained device regions and methods for fabricating same (2020-01-07),
5. 10522393 - Devices and methods of forming thereof by post single layer transfer fabrication of device isolation structures (2019-12-31),
6. 10510831 - Low on resistance high voltage metal oxide semiconductor transistor (2019-12-17),
7. 10424655 - Dual gate LDMOS and a process of forming thereof (2019-09-24),
8. 10347773 - Split gate non-volatile memory (NVM) with improved programming efficiency (2019-07-09),
9. 10319834 - Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOS (2019-06-11),
10. 10193002 - MOS varactors and methods for fabricating MOS varactors (2019-01-29),
11. 10032766 - VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices (2018-07-24),
12. 9960115 - Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metal (2018-05-01),
13. 9922868 - Integrated circuits using silicon on insulator substrates and methods of manufacturing the same (2018-03-20),
14. 9899527 - Integrated circuits with gaps (2018-02-20),
15. 9831304 - Integrated circuits with deep trench isolations and methods for producing the same (2017-11-28),

Title: Innovations by Raj Verma Purakh: A Pioneer in Semiconductor Technology

Introduction

Raj Verma Purakh, an innovative inventor based in Singapore, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 15 patents, he continues to push the boundaries of innovation in his industry.

Latest Patents

Among his latest contributions to technology are two groundbreaking patents. The first, titled "Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOS," details methods of forming an EDNMOS that utilizes polysilicon fingers positioned between a gate and a nitride spacer. This invention includes the formation of a polysilicon layer over a GOX layer, which enhances device performance through improved structural integrity.

The second patent focuses on an "Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance." This invention features a uniquely designed band region that is self-aligned to a drift well, reducing the risk of punch-through and enhancing the reliability of the transistor. By improving the architecture of the drift well, this invention effectively decreases drain to body parasitic capacitance, leading to superior device performance.

Career Highlights

Raj Verma Purakh currently works at GlobalFoundries Singapore Pte. Ltd., where he has dedicated his skills to developing cutting-edge semiconductor technologies. His career is marked by a relentless pursuit of excellence in innovation, making him a notable figure in the semiconductor field.

Collaborations

Throughout his professional journey, Raj has collaborated with skilled experts such as Shaoqiang Zhang and Jeoung Mo Koo. These partnerships have been instrumental in advancing his research and innovations, creating a dynamic team focused on enhancing semiconductor technology.

Conclusion

Raj Verma Purakh stands out as a prolific inventor whose contributions are making waves in the semiconductor industry. With his continuous innovations and collaborative efforts at GlobalFoundries Singapore, he is paving the way for future advancements in semiconductor technologies, leaving a legacy of improved device performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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