The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Sep. 13, 2016
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
A metal oxide semiconductor varactor includes an active area doped well that is disposed within a semiconductor substrate and a gate structure including a first portion that extends over the active area doped well and a second portion that extends over the semiconductor substrate outside of the active area doped well. The varactor further includes at least one active area contact structure formed in physical and electrical connection with the active area doped well, in a three-sided contact-landing area of the active area doped well. Still further, the varactor includes a gate contact structure that is formed in physical and electrical contact with the gate structure in the second portion of the gate structure such that the gate contact structure overlies the semiconductor substrate outside of the active area doped well.