logo

For the Inventor, By the Inventor

Singapore, Singapore

Shaoqiang Zhang

This inventor holds 26 USPTO granted patents and 1 published patent application, primarily in Integrated Circuits. Top assignees: Globalfoundries Singapore Pte. Ltd., Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 2009-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shaoqiang Zhang. Retrieved from https://idiyas.com/inventor/shaoqiang-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 76.9

Average Co-Inventor Count = 3.4

ph-index = 5

Forward Citations = 70(Granted Patents)


Company Filing History:

goldMedal24 out of 1,060 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal2 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents

Years Active: 2009-2021

Loading Chart...
Areas of Expertise:
Silicon Controlled Rectifier
LDMOS Transistor
Wide Band Gap Material
MOS Varactors
Heat Dissipation
RF Switch
Silicon on Insulator
High Voltage FINFET
Hierarchical Capacitor
Self-Aligned PNP Transistor
Deep Trench Isolation
ESD Protection
26 patents (USPTO):Explore Patents
1. 11004972 - Semiconductor device having conducting member for electrically coupling gate structure to underlying substrate of SOI structure (2021-05-11),
2. 10763250 - Silicon controlled rectifier (SCR) based ESD protection device (2020-09-01),
3. 10680099 - Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance (2020-06-09),
4. 10573639 - Silicon controlled rectifier (SCR) based ESD protection device (2020-02-25),
5. 10529738 - Integrated circuits with selectively strained device regions and methods for fabricating same (2020-01-07),
6. 10193002 - MOS varactors and methods for fabricating MOS varactors (2019-01-29),
7. 10192886 - Creation of wide band gap material for integration to SOI thereof (2019-01-29),
8. 10062710 - Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the same (2018-08-28),
9. 10020394 - Extended drain metal-oxide-semiconductor transistor (2018-07-10),
10. 9960115 - Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metal (2018-05-01),
11. 9922868 - Integrated circuits using silicon on insulator substrates and methods of manufacturing the same (2018-03-20),
12. 9899527 - Integrated circuits with gaps (2018-02-20),
13. 9899514 - Extended drain metal-oxide-semiconductor transistor (2018-02-20),
14. 9793185 - Test structure for monitoring liner oxidation (2017-10-17),
15. 9780207 - Self-aligned high voltage LDMOS (2017-10-03),

Title: The Innovative Journey of Shaoqiang Zhang

Introduction: Shaoqiang Zhang is a prolific inventor based in Singapore, SG, known for his groundbreaking contributions to various fields.

Latest Patents: Shaoqiang Zhang's latest patents include advancements in renewable energy technologies, artificial intelligence systems, and sustainable materials.

Career Highlights: With a career spanning over two decades, Shaoqiang Zhang has worked with leading research institutions and companies to develop cutting-edge solutions. His work has been recognized with numerous awards and accolades.

Collaborations: Shaoqiang Zhang has collaborated with top universities, multinational companies, and government agencies to bring his inventions to life. His collaborative spirit has led to the successful implementation of innovative ideas.

Conclusion: Shaoqiang Zhang's dedication to innovation and his passion for creating a positive impact on society make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…