The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Jan. 29, 2018
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Rui Tze Toh, Singapore, SG;

Guan Huei See, Singapore, SG;

Shaoqiang Zhang, Singapore, SG;

Purakh Raj Verma, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7824 (2013.01); H01L 29/1095 (2013.01); H01L 29/665 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/66742 (2013.01);
Abstract

Devices and methods for forming a device are disclosed. A substrate is provided. A first body well of a second polarity type is formed in the substrate. A second body well of the second polarity type is formed in the first body well. A bottom of the second body well and a bottom of the first body well are contiguous. Dopant concentrations of the first and second body wells include a graded profile. A transistor of a first polarity type is formed over the substrate. The transistor includes a source and a drain. The source is formed in the second body well.


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