Singapore, Singapore

Purakh Raj Verma

This inventor holds 147 USPTO granted patents and 26 published patent applications and 4 EPO patents, primarily in Semiconductor Technology (CPC class H01L29-0649). Top assignees: United Microelectronics Corp., Globalfoundries Singapore Pte. Ltd., Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 1998-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Purakh Raj Verma. Retrieved from https://idiyas.com/inventor/purakh-raj-verma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 147 

% Patents Active = 84.4

 

Average Co-Inventor Count = 3.1

ph-index = 10

Forward Citations = 394(Granted Patents)

Forward Citations (Not Self Cited) = 359(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Woodlands, SG (1999 - 2001)
  • Casablanca, SG (2009 - 2014)
  • Singapore, SG (1998 - 2024)

Company Filing History:


Years Active: 1998-2026

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Areas of Expertise:
Semiconductor Structure
Integrated Circuit Device
Fabrication Method
Heat Dissipation
Inductor Module
Transistor Structure
Wafer Bonding
Radiofrequency Device
Air Gap
Bonded Semiconductor
High Resistivity Wafer
Varactor Structure
147 patents (USPTO):Explore Patents

Title: Purakh Raj Verma: Innovating the Future with Cutting-Edge Patents

Introduction:

Purakh Raj Verma is a prominent inventor and patent holder based in Singapore, SG. With a remarkable number of 127 patents to his name, Verma has made significant contributions to the field of semiconductor devices. His relentless pursuit of innovation has led to groundbreaking inventions that have shaped the industry.

Latest Patents:

Verma's latest patents showcase his expertise in varactor structures and LDMOS devices. One of his notable inventions is the "Varactor with Meander Diffusion Region," which involves a varactor structure with alternating line portions arranged on gate structures, surrounded by a meander diffusion region. This patent offers improved performance and functionality for varactor applications.

Additionally, Verma has developed a semiconductor device titled "Semiconductor Device," which includes a ring-shaped gate structure with multiple gate portions, drain regions, source regions, body contact regions, and body implant regions. This invention enhances the performance and efficiency of LDMOS devices, contributing to advancements in the semiconductor industry.

Career Highlights:

Verma has worked with prestigious companies in the semiconductor domain, such as Globalfoundries Singapore Pte. Ltd. and United Microelectronics Corporation. These companies have provided Verma with a platform to utilize his skills and expertise in developing cutting-edge technologies for the industry. His innovative mindset and dedication to his work have earned him recognition as a respected inventor.

Collaborations:

Throughout his career, Verma has collaborated with esteemed individuals in the field. Notable coworkers include Kuo-Yuh Yang and Chia-Huei Lin. These collaborations have resulted in successful synergies, where Verma's expertise combined with the knowledge and skills of his colleagues have led to groundbreaking inventions and patents.

Conclusion:

Purakh Raj Verma's extensive patent portfolio and contributions to the semiconductor industry highlight his unwavering commitment to innovation. His latest patents in varactor structures and LDMOS devices showcase his ability to push the boundaries of technological advancements. Through his collaborations and continuous pursuit of excellence, Verma has played a crucial role in shaping the future of the semiconductor industry. His remarkable achievements serve as an inspiration for aspiring inventors and signify the importance of innovation in driving progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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