Sinan Goktepeli

This inventor holds 60 USPTO granted patents and 28 published patent applications, plus 3 CIPO patents and 9 EPO patents, primarily in Silicon-On-Insulator Technology (CPC class H01L). Top assignees: Qualcomm Incorporated, Freescale Semiconductor,inc., Psemi Corporation. Active years: 2006-2026.

USPTO Granted Patents = 60 (Patent Applications = 28)

% Patents Active = 75.0

CIPO Patents = 3

EPO Patents = 9 (Patent Applications = 29)

Average Co-Inventor Count = 2.4

ph-index = 10

Forward Citations = 358(Granted Patents)

Forward Citations (Not Self Cited) = 309(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Austin, TX (US) (2006 - 2023)
San Diego, CA (US) (2016 - 2023)

Company Filing History:

37 out of 44,749

Qualcomm Incorporated

patents

10 out of 5,491

Freescale Semiconductor,inc.

Murata Manufacturing Co., Ltd.

patents

5. 2 out of 223

Peregrine Semiconductor Corporation

patents

6. 1 out of 13,796

Murata Manufacturing Co., Ltd.

patents

7. 1 out of 5

Qualcomm Switch Corp.

where one patent can have more than one assignee

Years Active: 2006-2026

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Areas of Expertise:

Silicon-On-Insulator

MOSFET

Non-Volatile Memory

Radio Frequency Switch

Dual-Sided Processing

Backside Silicidation

Transistor Layout

Capacitance Balance

Integrated Acoustic Filter

Bipolar Junction Transistor

High Voltage Transistor

Logic Circuit Block

60 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12713631 - Three-Dimensional Integrated Circuit Resistors (2026-08-18),

2. 12685149 - Backside deep trench capacitor and inductor structures (2026-07-14),

3. 12677432 - FET fin and vertical nanosheet formation using porous semiconductors (2026-07-07),

4. 12660693 - Integration of discrete embeddable capacitors on integrated circuit chips (2026-06-16),

5. 12432991 - Back-gate effect control via doping (2025-09-30),

6. 12100707 - S-contact for SOI (2024-09-24),

7. 11735589 - S-contact for SOI (2023-08-22),

8. 11683065 - Series shunt biasing method to reduce parasitic loss in a radio frequency switch (2023-06-20),

9. 11387235 - S-contact for SOI (2022-07-12),

10. 11309352 - Integrated acoustic filter on complementary metal oxide semiconductor (CMOS) die (2022-04-19),

11. 11081582 - High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology (2021-08-03),

12. 11081559 - Backside contact of a semiconductor device (2021-08-03),

13. 10903357 - Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device (2021-01-26),

14. 10896958 - Silicon-on-insulator backside contacts (2021-01-19),

15. 10840387 - Buried oxide transcap devices (2020-11-17),

Title: The Innovations of Sinan Goktepeli in San Diego, CA

Introduction

Sinan Goktepeli, a prolific inventor based in San Diego, CA, has made significant contributions to the field of technology with 54 patents to his name. His latest patents demonstrate his keen focus on developing cutting-edge solutions for a variety of challenges in the realm of electronics and telecommunications.

Latest Patents

Goktepeli's recent patents include the innovative "S-contact for SOI" system, which enhances protection from charge injection in device layers using resistive structures. These s-contacts simplify fabrication methods and reduce the number of fabrication steps, particularly beneficial for metal-oxide-semiconductor field-effect transistors. Another notable invention is the "Series shunt biasing method," designed to minimize parasitic losses in radio frequency switches by employing a distributed gate bias network and body bias network.

Career Highlights

Throughout his career, Goktepeli has worked with prominent companies such as Qualcomm Incorporated and Freescale Semiconductor, Inc. His expertise and innovative mindset have undoubtedly enriched the technological landscape within these organizations.

Collaborations

Goktepeli has collaborated with accomplished professionals in his field, including coworkers George P Imthurn and Qingqing Liang. Together, they have undoubtedly driven forward-thinking research and development initiatives, leading to groundbreaking innovations.

Conclusion

In conclusion, Sinan Goktepeli's inventive spirit and dedication to technological advancement have positioned him as a leading figure in the world of electronics and telecommunications. His numerous patents and collaborative efforts underscore his profound impact on the industry, inspiring future generations of innovators to push the boundaries of what is possible in the realm of technology.