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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11309352 B1

PDFFull Text
Date of Patent:
Apr. 19, 2022

Filed:

Aug. 29, 2018

Integrated acoustic filter on complementary metal oxide semiconductor (cmos) die

Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Sinan Goktepeli, San Diego, CA (US);

Stephen Alan Fanelli, San Marcos, CA (US);

Yun Han Chu, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:

Seyfarth Shaw LLP/Qualcomm Incorporated

Primary Examiner:

Mounir S Amer

Assistant Examiner:

Alexander Belousov

Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/20 (2006.01); H03H 9/05 (2006.01); H03H 9/56 (2006.01); H03H 3/02 (2006.01); H03H 3/08 (2006.01); H03H 9/64 (2006.01); H03H 3/007 (2006.01); H03H 9/10 (2006.01); H03H 9/54 (2006.01); H03H 9/46 (2006.01); B81C 1/00 (2006.01); H03H 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/20 (2013.01); B81C 1/00246 (2013.01); H03H 3/0073 (2013.01); H03H 3/02 (2013.01); H03H 3/08 (2013.01); H03H 9/0547 (2013.01); H03H 9/0557 (2013.01); H03H 9/0561 (2013.01); H03H 9/1014 (2013.01); H03H 9/1071 (2013.01); H03H 9/465 (2013.01); H03H 9/545 (2013.01); H03H 9/564 (2013.01); H03H 9/64 (2013.01); B81B 2201/0271 (2013.01); H03H 9/0571 (2013.01); H03H 9/0576 (2013.01); H03H 2001/0064 (2013.01); H03H 2003/021 (2013.01);
Abstract

A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.

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