The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Feb. 11, 2020
Qualcomm Incorporated, San Diego, CA (US);
Qingqing Liang, San Diego, CA (US);
Ravi Pramod Kumar Vedula, San Diego, CA (US);
Sivakumar Kumarasamy, San Diego, CA (US);
George Pete Imthurn, San Diego, CA (US);
Sinan Goktepeli, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A method of constructing an integrated circuit (IC) includes fabricating a metal oxide semiconductor field effect transistor (MOSFET) on a first surface of an insulator layer of the integrated circuit. The insulator layer is supported by a sacrificial substrate. The MOSFET includes an extended drain region. The method deposits a front-side dielectric layer on the MOSFET, bonds a handle substrate to the front-side dielectric layer, and then removes the sacrificial substrate. The method also fabricates multiple back gates on a second surface of the insulator layer. The second surface is opposite the first surface.