San Diego, CA, United States of America

Qingqing Liang

This inventor holds 22 USPTO granted patents and 8 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignee: Qualcomm Incorporated. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qingqing Liang. Retrieved from https://idiyas.com/inventor/qingqing-liang-s8c1s44y

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 77.3

 

Average Co-Inventor Count = 4.8

ph-index = 2

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 2018-2026

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Areas of Expertise:
3DIC
Non-Volatile Memory
Variable Capacitor
Silicon-On-Insulator
Metal Oxide Semiconductor
Transistor Devices
Dual Sided Contacts
Capacitance Balance
Device Architecture
High Voltage MOSFET
Layer Transfer
Buried Oxide
22 patents (USPTO):Explore Patents

Title: The Innovative Journey of Qingqing Liang

Introduction

Qingqing Liang, based in San Diego, California, is an accomplished inventor known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 20 patents, his innovations have greatly impacted the development of high-performance electronic devices.

Latest Patents

Among his notable patents, Qingqing Liang has developed advanced semiconductor devices. One of his latest patents focuses on the "Backside contact of a semiconductor device," which introduces a semiconductor device with a backside gate contact, enhancing efficiency and performance. This innovation involves a transistor configuration with a gate region adjacent to the channel region, showcasing his expertise in optimizing semiconductor structures.

Another significant patent is the "High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology." This method outlines the construction of an integrated circuit that includes fabrication techniques for MOSFETs and back gates, further pushing the boundaries of semiconductor capabilities.

Career Highlights

Qingqing Liang's career is marked by his tenure at Qualcomm Incorporated, a leading company in semiconductor and telecommunications technologies. His work at Qualcomm reflects his commitment to advancing technology and contributes to the company's reputation for innovation in mobile communications.

Collaborations

Throughout his career, Qingqing has collaborated with notable colleagues, including Francesco Carobolante and Sinan Goktepeli. These collaborations have fostered a dynamic exchange of ideas, leading to groundbreaking advancements in their respective projects within the semiconductor realm.

Conclusion

In summary, Qingqing Liang's innovative contributions to semiconductor technology exemplify the spirit of invention that drives the industry forward. His extensive patent portfolio and collaboration with talented peers place him at the forefront of technological innovation, making a lasting impact on future electronic developments. His achievements continue to inspire and pave the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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