The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Apr. 20, 2018
Qualcomm Incorporated, San Diego, CA (US);
Qingqing Liang, San Diego, CA (US);
Francesco Carobolante, Carlsbad, CA (US);
Fabio Alessio Marino, San Marcos, CA (US);
Narasimhulu Kanike, San Diego, CA (US);
Paolo Menegoli, San Jose, CA (US);
Aristotele Hadjichristos, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a first semiconductor region; a first non-insulative region disposed adjacent to a first lateral side of the first semiconductor region; a second non-insulative region disposed adjacent to a second lateral side of the first semiconductor region, the second lateral side being opposite to the first lateral side; a second semiconductor region disposed adjacent to a third lateral side of the first semiconductor region, the second semiconductor region and the first semiconductor region having at least one of different doping types or different doping concentrations; an insulative layer adjacent to a top side of the first semiconductor region; and a third non-insulative region, the insulative layer being disposed between the third non-insulative region and the first semiconductor region.