The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Jan. 15, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Fabio Alessio Marino, San Marcos, CA (US);

Narasimhulu Kanike, San Diego, CA (US);

Francesco Carobolante, Carlsbad, CA (US);

Paolo Menegoli, San Jose, CA (US);

Qingqing Liang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 29/36 (2006.01); H01L 29/165 (2006.01); H01G 7/06 (2006.01); H01L 29/66 (2006.01); H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
H01L 29/94 (2013.01); H01G 7/06 (2013.01); H01L 29/165 (2013.01); H01L 29/36 (2013.01); H01L 29/66189 (2013.01); H01L 29/93 (2013.01);
Abstract

Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, an insulative layer, and a first non-insulative region, the insulative layer being disposed between the semiconductor region and the first non-insulative region. In certain aspects, the semiconductor variable capacitor may also include a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, the second non-insulative region and the third non-insulative region having different doping types. In certain aspects, the semiconductor variable capacitor may also include an implant region disposed between the semiconductor region and the insulative layer. The implant region may be used to adjust the flat-band voltage of the semiconductor variable capacitor.


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