The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Sep. 22, 2022
Qualcomm Incorporated, San Diego, CA (US);
Qingqing Liang, San Diego, CA (US);
Haining Yang, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Periannan Chidambaram, San Diego, CA (US);
George Pete Imthurn, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
Disclosed are apparatuses including transistor and methods for fabricating the same. The transistor may include a drain substantially enclosed in a drain silicide layer, wherein an integral drain via portion of the drain silicide layer is coupled to a second drain contact and wherein a first drain via couples the drain silicide layer to a first drain contact. The transistor may include a source substantially enclosed in a source silicide layer, wherein an integral source via portion of the source silicide layer is coupled to a second source contact and wherein a first source via couples the source silicide layer to a first source contact. The transistor may include a gate disposed between the source and the drain.