Wappingers Falls, NY, United States of America

Haining S Yang

USPTO Granted Patents = 251 

 

Average Co-Inventor Count = 2.4

ph-index = 23

Forward Citations = 2,240(Granted Patents)

DiyaCoin DiyaCoin 6.54 


Inventors with similar research interests:


Location History:

  • Wappingers Fall, NY (US) (2010)
  • Wappinger Falls, NY (US) (2008 - 2011)
  • Hopewell Junction, NY (US) (2011)
  • Wappingers Falls, NY (US) (2003 - 2015)
  • San Diego, NY (US) (2016)
  • San Diego, CA (US) (2012 - 2024)

Company Filing History:


Years Active: 2003-2025

where 'Filed Patents' based on already Granted Patents

251 patents (USPTO):

Title: Haining S Yang: A Pioneering Innovator in Semiconductor Technology

Introduction:

Haining S Yang, hailing from Wappingers Falls, NY, is an exceptional inventor and scientist with a remarkable track record in the field of semiconductor devices. With an impressive portfolio of 194 patents and a focus on cutting-edge technologies, Yang has made significant contributions to the advancement of the semiconductor industry. This article takes a closer look at his latest patents, career highlights, notable collaborations, and underscores his invaluable role in shaping the field of semiconductor technology.

Latest Patents:

Yang's recent patents have centered around novel techniques for enhancing semiconductor device performance. One of his notable inventions includes "Semiconductor devices having tensile and/or compressive stress and methods of manufacturing." This patent describes methods for introducing tensile and/or compressive strain in semiconductor structures, resulting in improved device functionalities. By epitaxially growing a straining material on the polysilicon layer of a gate stack structure, Yang's innovation opens up possibilities for significantly enhancing the performance of strained devices.

In addition, Yang's contributions extend to the development of "Heterojunction tunneling field-effect transistors and methods for fabricating the same." This patent focuses on the advancement of heterojunction tunneling effect transistors (TFETs), which offer increased energy efficiency and reduced power consumption. Yang's invention demonstrates the integration of different semiconductor materials and dopant species to create high-performance TFETs, highlighting his expertise in device engineering and fabrication.

Career Highlights:

Throughout his career, Yang has collaborated with prestigious companies and research institutions in the semiconductor industry. He notably worked with the renowned International Business Machines Corporation (IBM), a global leader in technology and innovation. His association with IBM attests to his exceptional capabilities and the recognition of his contributions within the industry.

Yang's career also involved collaboration with Chartered Semiconductor Manufacturing Ltd, now known as GLOBALFOUNDRIES, a major player in the semiconductor foundry business. This collaboration further expanded his expertise in semiconductor manufacturing processes, adding to his growing legacy as a leading innovator.

Collaborations:

Thomas W Dyer and Chih-Chao Yang are among the prominent coworkers and collaborators of Haining S Yang. These partnerships have resulted in breakthrough inventions, leveraging combined expertise and knowledge in the semiconductor field. Collaborations play a vital role in pushing the boundaries of innovation, and Yang's affiliations with talented individuals like Dyer and Yang reaffirm his commitment to advancing semiconductor technology through collective efforts.

Conclusion:

Haining S Yang's remarkable achievements and numerous patents reflect his expertise in semiconductor technology. His groundbreaking inventions in straining materials and heterojunction TFETs hold vast potential for enhancing the performance and efficiency of semiconductor devices. Collaborating with reputable organizations like IBM and Chartered Semiconductor Manufacturing Ltd has reinforced his position as an influential figure in the industry. Yang's contributions continue to shape the future of the semiconductor field and inspire aspiring innovators to push the boundaries of technological possibilities.

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