The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Feb. 08, 2023
Qualcomm Incorporated, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Haining Yang, San Diego, CA (US);
Hyunwoo Park, San Diego, CA (US);
Kwanyong Lim, San Diego, CA (US);
Ming-Huei Lin, New Taipei, TW;
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Disclosed are techniques for a semiconductor structure. In an aspect, a semiconductor structure includes a gate structure disposed on a substrate, a gate spacer adjacent to the gate structure, a source/drain structure adjacent to the gate spacer, a first dielectric layer disposed on the substrate and the source/drain structure, an etch stop spacer over the first dielectric layer and adjacent to the gate spacer, and an etch stop layer over the gate structure, the gate spacer, and the etch stop spacer. The semiconductor structure further includes a source/drain contact extending through the etch stop layer and the first dielectric layer and in contact with the source/drain structure, a sidewall of the source/drain contact adjoining a sidewall of the etch stop layer and a sidewall of the etch stop spacer.