Taipei, Taiwan

Ming-Huei Lin

This inventor holds 8 USPTO granted patents and 5 published patent applications. Top assignees: Qualcomm Incorporated, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Huei Lin. Retrieved from https://idiyas.com/inventor/ming-huei-lin-8glxklza

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8 

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • New Taipei, TW (2018)
  • Hsinchu, TW (2018)

Company Filing History:


Years Active: 2018-2026

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8 patents (USPTO):Explore Patents

Title: The Innovations of Ming-Huei Lin

Introduction

Ming-Huei Lin is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on improving the efficiency and performance of electronic devices.

Latest Patents

Ming-Huei Lin's latest patents include innovative designs that enhance electrical connections in semiconductor devices. One of his notable inventions is the "Selective contact on source and drain," which discloses devices that include a contact for electrical connection with a source or drain. This contact occupies the full width of a contact well, except for areas occupied by sidewall spacers. As a result, high resistivity, which is often caused by liners and nucleation layers within the contact well in conventional devices, is reduced or eliminated. Another significant patent is the "Metal gate structure and manufacturing method thereof," which describes an NMOS transistor gate structure. This structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer, and a bottom barrier layer with a higher oxygen concentration than nitrogen concentration. The bottom barrier layer is in direct contact with the gate dielectric layer and includes materials such as Ta, TaN, TaTi, and TaTiN.

Career Highlights

Ming-Huei Lin has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Qualcomm Incorporated. His experience in these organizations has allowed him to develop cutting-edge technologies that have a lasting impact on the industry.

Collaborations

Throughout his career, Ming-Huei Lin has collaborated with talented individuals such as Yen-Yu Chen and Chih-Pin Tsao. These collaborations have fostered innovation and contributed to the advancement of semiconductor technology.

Conclusion

Ming-Huei Lin's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence the development of more efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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