The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jun. 01, 2023
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Junjing Bao, San Diego, CA (US);
Haining Yang, San Diego, CA (US);
Ming-Huei Lin, New Taipei City, TW;
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/94 (2006.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/76831 (2013.01); H01L 23/53257 (2013.01); H10D 62/115 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract
Disclosed are devices that include a direct N/P local interconnect with minimal recess on shallow trench isolation (STI) oxide. This reduces undesirable coupling capacitance with active gate, which in turn improves AC performance of the device. Pull or even partial replacement of STI oxide with low-k dielectric can further reduce coupling capacitance.