The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Mar. 24, 2023
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Junjing Bao, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Chih-Sung Yang, Hsinchu, TW;
Kwanyong Lim, San Diego, CA (US);
Ming-Huei Lin, New Taipei, TW;
Hyunwoo Park, San Diego, CA (US);
Haining Yang, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/13 (2025.01); H01L 21/768 (2006.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H01L 21/76841 (2013.01); H10D 64/021 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract
Disclosed are devices that include a contact for electrical connection with a source/drain. The contact occupies a full width of a contact well other than areas occupied by sidewall spacers. As a result, high resistivity (due to the presence of liners and nucleation layers within the contact well in conventional devices) is reduced or eliminated.