The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Dec. 12, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ming-Huei Lin, New Taipei, TW;
Yen-Yu Chen, Kaohsiung, TW;
Chih-Pin Tsao, Hsinchu County, TW;
Shih-Hsun Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An NMOS transistor gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region and lining an inner sidewall of the spacer, a bottom barrier layer conformally disposed on the gate dielectric layer, a work function metal layer disposed on the bottom barrier layer, and a filling metal partially wrapped by the work function metal layer. The bottom barrier layer has an oxygen concentration higher than a nitrogen concentration. The bottom barrier layer is in direct contact with the gate dielectric layer. The bottom barrier layer includes a material selected from Ta, TaN, TaTi, TaTiN and a combination thereof.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile