The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Mar. 24, 2020
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Haining Yang, San Diego, CA (US);

Xia Li, San Diego, CA (US);

Bin Yang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/82385 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/402 (2013.01);
Abstract

An integrated device that includes a substrate, a first transistor located over the substrate, where the first transistor includes a gate. The integrated device includes a first gate contact coupled to the gate of the first transistor, where the first gate contact is configured to be electrically coupled to an interconnect of the integrated device. The integrated device includes a second gate contact coupled to the gate, where the second gate contact is directly electrically coupled to only the gate.


Find Patent Forward Citations

Loading…