The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Apr. 15, 2021
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Haining Yang, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42372 (2013.01); H01L 21/823828 (2013.01); H01L 27/092 (2013.01); H01L 29/401 (2013.01);
Abstract
In an aspect, a semiconductor device includes a gate. The gate includes a first portion that is located on one end of the gate, a second portion that is located on an opposite end of the gate from the first portion, and a third portion that is located in-between the first portion and the second portion. A first cap located on top of the first portion. A second cap located on top of the second portion. The third portion is capless. A gate contact is located on top of the third portion.