The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Dec. 12, 2019
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM INCORPORATED, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 21/76243 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823892 (2013.01); H01L 29/045 (2013.01); H01L 29/0665 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
Certain aspects of the present disclosure are directed to a semiconductor device. The semiconductor device generally includes a substrate, at least one silicon-on-insulator (SOI) transistor disposed above the substrate, a gate-all-around (GAA) transistor disposed above the substrate, and a fin field-effect transistor (FinFET) disposed above the substrate.