The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Sep. 21, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Purakh Raj Verma, Singapore, SG;

Su Xing, Singapore, SG;

Jinyu Liao, Singapore, SG;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H03F 3/16 (2006.01); H10D 87/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/673 (2025.01); H10D 30/6713 (2025.01); H10D 87/00 (2025.01); H03F 3/16 (2013.01); H03F 2200/294 (2013.01);
Abstract

A semiconductor device includes a substrate having an active area, a first gate line extending along a first direction on the active area, a first gate line extension adjacent to the first gate line and outside the active area, a second gate line extending along the first direction on the active area and adjacent to the first gate line, and a second gate line extension adjacent to the second gate line and outside the active area. Preferably, the active area includes a first indentation and a second indentation, in which the first gate line extension overlaps the first indentation and the second gate line extension overlaps the second indentation.


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