The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Sep. 29, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/36 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/48 (2006.01); H01L 23/485 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3677 (2013.01); H01L 21/76898 (2013.01); H01L 23/3735 (2013.01); H01L 23/481 (2013.01); H01L 23/485 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01);
Abstract
A semiconductor structure with a heat dissipation structure includes a first device wafer includes a front side and a back side. A first transistor is disposed on the front side. The first transistor includes a first gate structure disposed on the front side. Two first source/drain doping regions are embedded within the first device wafer at two side of the first gate structure. A channel region is disposed between the two first source/drain doping regions and embedded within the first device wafer. A first dummy metal structure contacts the back side of the first device wafer, and overlaps the channel region.