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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12131976 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Sep. 29, 2020

Semiconductor structure with heat dissipation structure and method of fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Purakh Raj Verma, Singapore, SG;

Kuo-Yuh Yang, Hsinchu County, TW;

Chia-Huei Lin, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Vu A Vu

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 23/36 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/48 (2006.01); H01L 23/485 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3677 (2013.01); H01L 21/76898 (2013.01); H01L 23/3735 (2013.01); H01L 23/481 (2013.01); H01L 23/485 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01);
Abstract

A semiconductor structure with a heat dissipation structure includes a first device wafer includes a front side and a back side. A first transistor is disposed on the front side. The first transistor includes a first gate structure disposed on the front side. Two first source/drain doping regions are embedded within the first device wafer at two side of the first gate structure. A channel region is disposed between the two first source/drain doping regions and embedded within the first device wafer. A first dummy metal structure contacts the back side of the first device wafer, and overlaps the channel region.

Find Patent Forward Citations

Verma, Purakh. (2024). Semiconductor structure with heat dissipation structure and method of fabricating the same (U.S. Patent No. 12131976). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12131976

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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