The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Aug. 23, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Bo Tao, Singapore, SG;
Runshun Wang, Singapore, SG;
Li Wang, Singapore, SG;
Ching-Yang Wen, Pingtung County, TW;
Purakh Raj Verma, Singapore, SG;
Dong Yin, Nantong, CN;
Jian Xie, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of fabricating an air gap includes receiving a first thickness information of an inter-metal dielectric layer formed on a substrate and receiving a second thickness information of an inter-layer dielectric layer formed on the substrate. Then, a first etching is performed, wherein the first etching includes etch the inter-metal dielectric layer based on a first etching control value corresponding to the first thickness information. After the first etching, a second etching is performed to etch the inter-layer dielectric layer based on a second etching control value corresponding to the second thickness information.