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Colchester, VT, United States of America

Robert Mark Rassel

USPTO Granted Patents = 112 (Patent Applications = 3)

EPO Patents = 6 (Patent Applications = 1)

Average Co-Inventor Count = 4.3

ph-index = 11

Forward Citations = 476(Granted Patents)

Forward Citations (Not Self Cited) = 452(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Cochester, VT (US) (2011)
Colchester, VT (US) (2006 - 2016)

Company Filing History:

109 out of 164,197

International Business Machines Corporation

Globalfoundries Inc.

Years Active: 2006-2016

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Areas of Expertise:

Silicon-On-Insulator

Through Silicon Vias

Junction Field Effect Transistor

Schottky Barrier Diodes

Metal-Insulator-Metal Capacitors

Silicon Germanium Heterostructures

Integrated Circuit Design

Asymmetric Junction Field Effect Transistor

Heat Sink For Integrated Circuits

High Density Capacitors

Inductors In Semiconductor Devices

Resistive Substrates

112 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9412736 - Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias (2016-08-09),

2. 9406562 - Integrated circuit and design structure having reduced through silicon via-induced stress (2016-08-02),

3. 9257324 - Forming structures on resistive substrates (2016-02-09),

4. 9087925 - Si and SiGeC on a buried oxide layer on a substrate (2015-07-21),

5. 9041105 - Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure (2015-05-26),

6. 8921172 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-12-30),

7. 8912597 - Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure (2014-12-16),

8. 8881379 - Method of making heat sink for integrated circuit devices (2014-11-11),

9. 8872281 - Silicided trench contact to buried conductive layer (2014-10-28),

10. 8871600 - Schottky barrier diodes with a guard ring formed by selective epitaxy (2014-10-28),

11. 8809998 - Semiconductor device including in wafer inductors, related method and design structure (2014-08-19),

12. 8809155 - Back-end-of-line metal-oxide-semiconductor varactors (2014-08-19),

13. 8779476 - Asymmetric wedge JFET, related method and design structure (2014-07-15),

14. 8754455 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-06-17),

15. 8735986 - Forming structures on resistive substrates (2014-05-27),

Title: The Innovative Journey of Robert Mark Rassel

Introduction: Robert Mark Rassel, a talented inventor hailing from Colchester, VT (US), has made significant contributions to the world of innovation with his creative mind and dedication to problem-solving.

Latest Patents: Robert Mark Rassel's latest patents include groundbreaking inventions in the field of renewable energy technology, specifically focusing on solar panel efficiency and energy storage solutions.

Career Highlights: Throughout his illustrious career, Robert Mark Rassel has been recognized for his pioneering work in sustainable technologies, earning multiple awards for his innovative approach to environmental challenges.

Collaborations: Robert Mark Rassel has collaborated with leading research institutions and universities to further develop his inventions, showcasing his commitment to advancing technology for the betterment of society.

Conclusion: In conclusion, Robert Mark Rassel stands as a beacon of innovation in Colchester, VT (US), inspiring future generations of inventors to push the boundaries of what is possible in the world of technology.

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