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For the Inventor, By the Inventor

Colchester, VT, United States of America

Robert Mark Rassel

USPTO Granted Patents = 112 

 

Average Co-Inventor Count = 4.3

ph-index = 11

Forward Citations = 476(Granted Patents)

DiyaCoin DiyaCoin = 0.18 


Inventors with similar research interests:


Location History:

  • Cochester, VT (US) (2011)
  • Colchester, VT (US) (2006 - 2016)

Company Filing History:

goldMedal109 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal3 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2006-2016

where 'Filed Patents' based on already Granted Patents

112 patents (USPTO):
1. 9412736 - Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias (2016-08-09),
2. 9406562 - Integrated circuit and design structure having reduced through silicon via-induced stress (2016-08-02),
3. 9257324 - Forming structures on resistive substrates (2016-02-09),
4. 9087925 - Si and SiGeC on a buried oxide layer on a substrate (2015-07-21),
5. 9041105 - Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure (2015-05-26),
6. 8921172 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-12-30),
7. 8912597 - Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure (2014-12-16),
8. 8881379 - Method of making heat sink for integrated circuit devices (2014-11-11),
9. 8872281 - Silicided trench contact to buried conductive layer (2014-10-28),
10. 8871600 - Schottky barrier diodes with a guard ring formed by selective epitaxy (2014-10-28),
11. 8809998 - Semiconductor device including in wafer inductors, related method and design structure (2014-08-19),
12. 8809155 - Back-end-of-line metal-oxide-semiconductor varactors (2014-08-19),
13. 8779476 - Asymmetric wedge JFET, related method and design structure (2014-07-15),
14. 8754455 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-06-17),
15. 8735986 - Forming structures on resistive substrates (2014-05-27),

Title: The Innovative Journey of Robert Mark Rassel

Introduction: Robert Mark Rassel, a talented inventor hailing from Colchester, VT (US), has made significant contributions to the world of innovation with his creative mind and dedication to problem-solving.

Latest Patents: Robert Mark Rassel's latest patents include groundbreaking inventions in the field of renewable energy technology, specifically focusing on solar panel efficiency and energy storage solutions.

Career Highlights: Throughout his illustrious career, Robert Mark Rassel has been recognized for his pioneering work in sustainable technologies, earning multiple awards for his innovative approach to environmental challenges.

Collaborations: Robert Mark Rassel has collaborated with leading research institutions and universities to further develop his inventions, showcasing his commitment to advancing technology for the betterment of society.

Conclusion: In conclusion, Robert Mark Rassel stands as a beacon of innovation in Colchester, VT (US), inspiring future generations of inventors to push the boundaries of what is possible in the world of technology.

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