The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Jul. 19, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alan B. Botula, Essex Junction, VT (US);

Robert M. Rassel, Colchester, VT (US);

Yun Shi, South Burlington, VT (US);

Mark E. Stidham, Bloomington, IN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 29/7835 (2013.01); H01L 21/26586 (2013.01); H01L 29/66659 (2013.01);
Abstract

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including a first source drain region, a second source drain region, and an intrinsic region therebetween; an asymmetric lightly doped drain (LDD) region within the substrate, wherein the asymmetric LDD region extends from the first source drain region into the intrinsic region between the first source drain region and the second source drain region; and a gate positioned atop the semiconductor substrate, wherein an outer edge of the gate overlaps the second source drain region. A related method and design structure are also disclosed.


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