South Burlington, VT, United States of America

Yun Shi

USPTO Granted Patents = 63 (Patent Applications = 6)

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 492(Granted Patents)

Forward Citations (Not Self Cited) = 463(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Essex Junction, VT (US) (2011)
Burlington, VT (US) (2013)
South Burlington, VT (US) (2009 - 2018)
San Diego, CA (US) (2017 - 2024)

Company Filing History:

45 out of 164,197

International Business Machines Corporation

Skyworks Solutions, Inc.

patents

4. 1 out of 832,843

Other

patents

Years Active: 2009-2025

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Areas of Expertise:

Transistors

Radio-Frequency Circuits

Schottky Barriers

Cascode Amplifier Optimization

Field Effect Transistor

Lateral Diffused Metal Oxide Semiconductor

High Voltage Devices

Silicon Controlled Rectifier

Integrated Circuits

Semiconductor Structures

High Performance FET

63 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12191353 - Transistors for radio-frequency circuits and devices (2025-01-07),

2. 11862725 - Transistors with schottky barriers (2024-01-02),

3. 11742408 - Cascode amplifier optimization (2023-08-29),

4. 11705487 - Transistors having reduced parasitics and enhanced performance (2023-07-18),

5. 11417762 - Switch with integrated Schottky barrier contact (2022-08-16),

6. 10886382 - Cascode amplifier optimization (2021-01-05),

7. 10050115 - Tapered gate oxide in LDMOS devices (2018-08-14),

8. 9847415 - Field effect transistor and method of manufacture (2017-12-19),

9. 9799652 - Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure (2017-10-24),

10. 9786606 - Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method (2017-10-10),

11. 9768028 - Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure (2017-09-19),

12. 9595579 - Dual shallow trench isolation (STI) structure for field effect transistor (FET) (2017-03-14),

13. 9356014 - High-voltage metal-insulator-semiconductor field effect transistor structures (2016-05-31),

14. 9337310 - Low leakage, high frequency devices (2016-05-10),

15. 9324632 - Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method (2016-04-26),

Title: The Innovative Journey of Inventor Yun Shi

Introduction: Yun Shi, a talented inventor hailing from South Burlington, VT, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Yun Shi holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and forward-thinking approach to problem-solving.

Career Highlights: With a background in engineering and a passion for creating solutions that make a difference, Yun Shi has worked for leading tech companies, where he has spearheaded projects that have pushed the boundaries of what is possible in the industry.

Collaborations: Throughout his career, Yun Shi has collaborated with top researchers, engineers, and scientists to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many of his projects.

Conclusion: Inventor Yun Shi's relentless pursuit of innovation and his commitment to creating a better future through technology make him a true pioneer in his field, inspiring the next generation of inventors to dream big and think outside the box.

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6 patents pending:

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