The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Jun. 25, 2020
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Yun Shi, San Diego, CA (US);

John Tzung-Yin Lee, Costa Mesa, CA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7839 (2013.01); H03K 17/6871 (2013.01); H03F 3/245 (2013.01); H03F 2200/451 (2013.01);
Abstract

Circuits, systems, devices, and methods related to a switch with an integrated Schottky barrier contact are discussed herein. For example, a radio-frequency switch can include an input node, an output node, and a transistor connected between the input node and the output node. The transistor can be configured to control passage of a radio-frequency signal from the input node to the output node. The transistor can include a first Schottky diode integrated into a drain of the transistor and/or a second Schottky diode integrated into a source of the transistor. The first Schottky diode and/or the second Schottky diode can be configured to compensate a non-linearity effect of the radio-frequency switch.


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