The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
May. 14, 2015
Globalfoundries Inc., Grand Cayman, KY;
Natalie B. Feilchenfeld, Jericho, VT (US);
Max G. Levy, Essex Junction, VT (US);
Richard A. Phelps, Colchester, VT (US);
Santosh Sharma, Essex Junction, VT (US);
Yun Shi, South Burlington, VT (US);
Michael J. Zierak, Colchester, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Various embodiments include structures for field effect transistors (FETs). In various embodiments, a structure for a FET includes: a deep n-type well; a shallow n-type well within the deep n-type well; and a shallow trench isolation (STI) region within the shallow n-type well, the STI region including: a first section having a first depth within the shallow n-type well as measured from an upper surface of the shallow n-type well, and a second section contacting and overlying the first section, the second section having a second depth within the shallow n-type well as measured from the upper surface of the shallow n-type well.