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Natalie Barbara Feilchenfeld

This inventor holds 45 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Structures. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 1989-2020.

USPTO Granted Patents = 45 (Patent Applications = 2)

% Patents Active = 64.4

Average Co-Inventor Count = 4.8

ph-index = 10

Forward Citations = 380(Granted Patents)

Location History:

Endicott, NY (US) (1989 - 2000)
Endwell, NY (US) (1996 - 2003)
Essex Junction, NY (US) (2012)
Jericho, VT (US) (2000 - 2020)

Company Filing History:

34 out of 166,325

International Business Machines Corporation

Years Active: 1989-2020

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Areas of Expertise:

Lateral PiN Diodes

Bipolar Transistors

Field Effect Transistor

Shallow Trench Isolation

High Voltage Devices

Interdigitated Capacitors

Metal Insulator Metal Capacitor

Integrated Circuits

Dopant Implant Regions

Device Isolation

Chemical Polishing

Thin Film Chip Carrier

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10535551 - Lateral PiN diodes and schottky diodes (2020-01-14),

2. 10446644 - Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer (2019-10-15),

3. 10050115 - Tapered gate oxide in LDMOS devices (2018-08-14),

4. 9947573 - Lateral PiN diodes and schottky diodes (2018-04-17),

5. 9893157 - Structures with contact trenches and isolation trenches (2018-02-13),

6. 9799652 - Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure (2017-10-24),

7. 9786606 - Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method (2017-10-10),

8. 9768028 - Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure (2017-09-19),

9. 9595579 - Dual shallow trench isolation (STI) structure for field effect transistor (FET) (2017-03-14),

10. 9324632 - Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method (2016-04-26),

11. 9202869 - Self-aligned bipolar junction transistor having self-planarizing isolation raised base structures (2015-12-01),

12. 9059276 - High voltage laterally diffused metal oxide semiconductor (2015-06-16),

13. 8946013 - Lateral diffusion field effect transistor with drain region self-aligned to gate electrode (2015-02-03),

14. 8901710 - Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance (2014-12-02),

15. 8796108 - Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode (2014-08-05),

Title: Innovations of Natalie Barbara Feilchenfeld

Introduction

Natalie Barbara Feilchenfeld, based in Jericho, Vermont, is a prolific inventor with an impressive portfolio of 45 patents. Her work primarily focuses on advancements in semiconductor technologies, significantly impacting the field of electronics.

Latest Patents

Among her latest innovations are patents for lateral PiN diodes and Schottky diodes. These patents include designs for diodes with low parasitic capacitance and adjustable breakdown voltage structures, as well as methods of manufacture. Noteworthy is her patented structure that achieves a breakdown voltage determined by the dimensions between the p-and n-terminals formed in an i-region above a substrate.

Additionally, she has developed device structures for silicon-on-insulator substrates with high-resistance handle wafers. These methods involve the formation of doped regions in the handle wafer, as well as the creation of trenches that extend through various layers to facilitate the growth of semiconductor layers. This innovative process ultimately leads to the formation of advanced device structures essential for modern semiconductor applications.

Career Highlights

Natalie's career includes significant contributions while working at renowned companies, such as IBM and GlobalFoundries Inc. Her deep expertise in semiconductor devices is backed by her extensive experience in research and development.

Collaborations

Throughout her career, Natalie has collaborated with notable peers, including Michael Joseph Zierak and Yun Shi. These collaborations have facilitated innovative research and contributed to the advancement of semiconductor technology.

Conclusion

Natalie Barbara Feilchenfeld exemplifies innovation in the field of electronics through her extensive patent portfolio and her commitment to advancing semiconductor technologies. Her ongoing contributions continue to inspire future advancements in the industry.

Profile summary based on public USPTO records.

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