The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Feb. 02, 2012
Applicants:

Natalie B. Feilchenfeld, Jericho, VT (US);

Jeffrey P. Gambino, Westford, VT (US);

Xuefeng Liu, South Burlington, VT (US);

Benjamin T. Voegeli, Burlington, VT (US);

Steven H. Voldman, South Burlington, VT (US);

Michael J. Zierak, Essex Junction, VT (US);

Inventors:

Natalie B. Feilchenfeld, Jericho, VT (US);

Jeffrey P. Gambino, Westford, VT (US);

Xuefeng Liu, South Burlington, VT (US);

Benjamin T. Voegeli, Burlington, VT (US);

Steven H. Voldman, South Burlington, VT (US);

Michael J. Zierak, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01L 21/26513 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 29/1045 (2013.01); H01L 29/6656 (2013.01);
Abstract

A disposable structure displaced from an edge of a gate electrode and a drain region aligned to the disposable structure is formed. Thus, the drain region is self-aligned to the edge of the gate electrode. The disposable structure may be a disposable spacer, or alternately, the disposable structure may be formed simultaneously with, and comprise the same material as, a gate electrode. After formation of the drain regions, the disposable structure is removed. The self-alignment of the drain region to the edge of the gate electrode provides a substantially constant drift distance that is independent of any overlay variation of lithographic processes.


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