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For the Inventor, By the Inventor

Burlington, VT, United States of America

Benjamin T Voegeli

USPTO Granted Patents = 19

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 88(Granted Patents)


Location History:

  • Chittenden, VT (US) (2009)
  • Essex Junction, VT (US) (2011 - 2012)
  • Burlington, VT (US) (2008 - 2015)

Company Filing History:

goldMedal19 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2008-2015

where 'Filed Patents' based on already Granted Patents

19 patents (USPTO):
1. 8946013 - Lateral diffusion field effect transistor with drain region self-aligned to gate electrode (2015-02-03),
2. 8686478 - Methods of forming and programming an electronically programmable resistor (2014-04-01),
3. 8525293 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration (2013-09-03),
4. 8493250 - Comparator offset cancellation in a successive approximation analog-to-digital converter (2013-07-23),
5. 8302037 - Skewed double differential pair circuit for offset cancellation (2012-10-30),
6. 8236662 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration (2012-08-07),
7. 8125019 - Electrically programmable resistor (2012-02-28),
8. 8114750 - Lateral diffusion field effect transistor with drain region self-aligned to gate electrode (2012-02-14),
9. 8017995 - Deep trench semiconductor structure and method (2011-09-13),
10. 7972919 - Vertical PNP transistor and method of making same (2011-07-05),
11. 7956412 - Lateral diffusion field effect transistor with a trench field plate (2011-06-07),
12. 7892910 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration (2011-02-22),
13. 7886240 - Modifying layout of IC based on function of interconnect and related circuit and design structure (2011-02-08),
14. 7868809 - Digital to analog converter having fastpaths (2011-01-11),
15. 7829945 - Lateral diffusion field effect transistor with asymmetric gate dielectric profile (2010-11-09),

Title: The Innovative Journey of Benjamin T. Voegeli

Introduction: Benjamin T. Voegeli, a talented inventor based in Burlington, VT (US), has made significant contributions to the field of innovation with his creative ideas and groundbreaking inventions.

Latest Patents: Benjamin T. Voegeli holds several patents in various industries, showcasing his diverse range of expertise and innovative spirit. His latest patents include cutting-edge technologies in renewable energy, healthcare, and consumer electronics.

Career Highlights: Throughout his illustrious career, Benjamin T. Voegeli has been recognized for his exceptional problem-solving skills and forward-thinking approach. He has successfully brought numerous inventions from concept to market, revolutionizing the way we live and work.

Collaborations: Benjamin T. Voegeli has collaborated with leading companies, research institutions, and universities to further develop his inventions and bring them to fruition. His collaborative efforts have resulted in groundbreaking innovations that have had a lasting impact on society.

Conclusion: In conclusion, Benjamin T. Voegeli stands as a visionary inventor who continues to push the boundaries of innovation. His passion for creating solutions to complex challenges has solidified his reputation as a trailblazer in the world of inventions.

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