The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 07, 2013
International Business Machines Corporation, Armonk, NY (US);
Natalie B. Feilchenfeld, Jericho, VT (US);
Theodore J. Letavic, Colchester, VT (US);
Richard A. Phelps, Colchester, VT (US);
Santosh Sharma, Essex Junction, VT (US);
Yun Shi, South Burlington, VT (US);
Michael J. Zierak, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
High-voltage LDMOS devices with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming an insulator layer of varying depth over a drift region and a body of a substrate. The method further includes forming a control gate and a split gate region by patterning a layer of material on the insulator layer. The split gate region is formed on a first portion of the insulator layer and the control gate is formed on a second portion of the insulator layer, which is thinner than the first portion.