Essex Junction, VT, United States of America

Santosh Sharma

USPTO Granted Patents = 12 

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 529(Granted Patents)


Location History:

  • San Diego, CA (US) (2016 - 2017)
  • Essex Junction, VT (US) (2015 - 2018)

Company Filing History:


Years Active: 2015-2018

where 'Filed Patents' based on already Granted Patents

12 patents (USPTO):

Title: Innovations of Santosh Sharma

Introduction

Santosh Sharma is a prominent inventor based in Essex Junction, Vermont, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, he has made remarkable advancements in the field of lateral double-diffused metal oxide semiconductor (LDMOS) devices.

Latest Patents

One of his latest patents focuses on the "Tapered gate oxide in LDMOS devices." This invention provides a method for forming a semiconductor structure that includes a gate dielectric with varying thicknesses and a tapered surface at an acute angle relative to the substrate. Another notable patent is for a "Semiconductor structure with a dopant implant region having a linearly graded conductivity level." This patent discloses methods that utilize a mask with openings arranged in a specific pattern to achieve a linearly graded conductivity level, enhancing the manufacturability of LDMOSFETs.

Career Highlights

Throughout his career, Santosh has worked with leading companies in the technology sector, including GlobalFoundries Inc. and IBM. His work has significantly impacted the development of advanced semiconductor devices, showcasing his expertise and innovative approach.

Collaborations

Santosh has collaborated with notable professionals in his field, including Yun Shi and Michael Joseph Zierak. These collaborations have further enriched his work and contributed to the advancements in semiconductor technology.

Conclusion

Santosh Sharma's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative approaches continue to shape the future of LDMOS devices and semiconductor structures.

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