Santosh Sharma

USPTO Granted Patents = 12 (Patent Applications = 1)

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 535(Granted Patents)

Location History:

San Diego, CA (US) (2016 - 2017)
Essex Junction, VT (US) (2015 - 2018)

Company Filing History:

International Business Machines Corporation

patents

Years Active: 2015-2018

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10050115 - Tapered gate oxide in LDMOS devices (2018-08-14),

2. 9799652 - Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure (2017-10-24),

3. 9768028 - Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure (2017-09-19),

4. 9595579 - Dual shallow trench isolation (STI) structure for field effect transistor (FET) (2017-03-14),

5. 9337310 - Low leakage, high frequency devices (2016-05-10),

6. 9324846 - Field plate in heterojunction bipolar transistor with improved break-down voltage (2016-04-26),

7. 9240463 - High voltage laterally diffused metal oxide semiconductor (2016-01-19),

8. 9236449 - High voltage laterally diffused metal oxide semiconductor (2016-01-12),

9. 9224858 - Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFET (2015-12-29),

10. 9059276 - High voltage laterally diffused metal oxide semiconductor (2015-06-16),

11. 8981475 - Lateral diffusion metal oxide semiconductor (LDMOS) (2015-03-17),

12. 8962402 - Lateral diffusion metal oxide semiconductor (LDMOS) device with tapered drift electrode (2015-02-24),

Title: Innovations of Santosh Sharma

Introduction

Santosh Sharma is a prominent inventor based in Essex Junction, Vermont, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, he has made remarkable advancements in the field of lateral double-diffused metal oxide semiconductor (LDMOS) devices.

Latest Patents

One of his latest patents focuses on the "Tapered gate oxide in LDMOS devices." This invention provides a method for forming a semiconductor structure that includes a gate dielectric with varying thicknesses and a tapered surface at an acute angle relative to the substrate. Another notable patent is for a "Semiconductor structure with a dopant implant region having a linearly graded conductivity level." This patent discloses methods that utilize a mask with openings arranged in a specific pattern to achieve a linearly graded conductivity level, enhancing the manufacturability of LDMOSFETs.

Career Highlights

Throughout his career, Santosh has worked with leading companies in the technology sector, including GlobalFoundries Inc. and IBM. His work has significantly impacted the development of advanced semiconductor devices, showcasing his expertise and innovative approach.

Collaborations

Santosh has collaborated with notable professionals in his field, including Yun Shi and Michael Joseph Zierak. These collaborations have further enriched his work and contributed to the advancements in semiconductor technology.

Conclusion

Santosh Sharma's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative approaches continue to shape the future of LDMOS devices and semiconductor structures.

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