The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

May. 05, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Theodore J. Letavic, Putnam Valley, NY (US);

Max G. Levy, Essex Junction, VT (US);

Santosh Sharma, Essex Junction, VT (US);

Yun Shi, South Burlington, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/26586 (2013.01); H01L 29/7816 (2013.01);
Abstract

Low leakage, high frequency devices and methods of manufacture are disclosed. The method of forming a device includes implanting a lateral diffusion drain implant in a substrate by a blanket implantation process. The method further includes forming a self-aligned tapered gate structure on the lateral diffusion drain implant. The method further includes forming a halo implant in the lateral diffusion drain implant, adjacent to the self-aligned tapered gate structure and at least partially under a source region of the self-aligned tapered gate structure.


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