The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Jun. 18, 2013
International Business Machines Corporation, Armonk, NY (US);
Santosh Sharma, Essex Junction, VT (US);
Yun Shi, South Burlington, VT (US);
Anthony K. Stamper, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A lateral diffusion metal oxide semiconductor (LDMOS) comprises a semiconductor substrate having an STI structure in a top surface of the substrate, a drift region below the STI structure, and a source region and a drain region on opposite sides of the STI structure. A gate conductor is on the substrate over a gap between the STI structure and the source region and partially overlaps the drift region. A conformal dielectric layer is on the top surface and forms a mesa above the gate conductor. The conformal dielectric layer has a conformal etch-stop layer embedded therein. Contact studs extend through the dielectric layer and the etch-stop layer, and are connected to the source region, drain region, and gate conductor. A source electrode contacts the source contact stud, a gate electrode contacts the gate contact stud, and a drain electrode contacts the drain contact stud. A drift electrode is over the drift region.