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For the Inventor, By the Inventor

Colchester, VT, United States of America

Richard A Phelps

USPTO Granted Patents = 44 

 

Average Co-Inventor Count = 5.1

ph-index = 6

Forward Citations = 126(Granted Patents)


Location History:

  • Williamstown, VT (US) (2008 - 2012)
  • Essex Junction, NY (US) (2012)
  • Colchester, VT (US) (2005 - 2018)

Company Filing History:

goldMedal38 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2005-2018

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Areas of Expertise:
Shallow Trench Isolation
Silicon-On-Insulator
Junction Field Effect Transistor
High Voltage MOSFET
Silicon Controlled Rectifier
Asymmetric JFET
Back-End-Of-Line Varactors
Stress Enhanced LDMOS
Noble Gas Implantation
Integrated Circuit Design
Depletion Mode MOSFET
Pixel Sensor Technology
44 patents (USPTO):Explore Patents
1. 10163679 - Shallow trench isolation formation without planarization (2018-12-25),
2. 9978849 - SOI-MOSFET gate insulation layer with different thickness (2018-05-22),
3. 9761525 - Multiple back gate transistor (2017-09-12),
4. 9755015 - Air gaps formed by porous silicon removal (2017-09-05),
5. 9595579 - Dual shallow trench isolation (STI) structure for field effect transistor (FET) (2017-03-14),
6. 9383404 - High resistivity substrate final resistance test structure (2016-07-05),
7. 9059276 - High voltage laterally diffused metal oxide semiconductor (2015-06-16),
8. 9034712 - Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage (2015-05-19),
9. 8946799 - Silicon controlled rectifier with stress-enhanced adjustable trigger voltage (2015-02-03),
10. 8921172 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-12-30),
11. 8828746 - Compensation for a charge in a silicon substrate (2014-09-09),
12. 8809155 - Back-end-of-line metal-oxide-semiconductor varactors (2014-08-19),
13. 8796108 - Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode (2014-08-05),
14. 8779476 - Asymmetric wedge JFET, related method and design structure (2014-07-15),
15. 8754455 - Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure (2014-06-17),

Title: The Legacy of Richard A Phelps: Pioneering Inventor from Colchester, VT

Introduction: Richard A Phelps is a distinguished inventor hailing from Colchester, Vermont, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Richard A Phelps holds several patents in diverse areas such as renewable energy technologies, medical devices, and consumer electronics, showcasing his versatility and ingenuity.

Career Highlights: With a career spanning over two decades, Richard A Phelps has established himself as a visionary inventor, with a keen eye for identifying gaps in the market and developing solutions that push the boundaries of technology.

Collaborations: Throughout his career, Richard A Phelps has collaborated with leading research institutions, universities, and companies to bring his inventions to life, fostering a culture of innovation and excellence in the industry.

Conclusion: Richard A Phelps's relentless pursuit of innovation and his passion for creating solutions to real-world problems have solidified his position as a trailblazing inventor, leaving an indelible mark on the world of technology and beyond.

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