The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Dec. 29, 2015
Globalfoundries Inc., Grand Cayman, KY;
Michel J. Abou-Khalil, Essex Junction, VT (US);
Alan Bernard Botula, Essex Junction, VT (US);
Blaine Jeffrey Gross, Essex Junction, VT (US);
Mark David Jaffe, Shelburne, VT (US);
Alvin Joseph, Williston, VT (US);
Richard A. Phelps, Colchester, VT (US);
Steven M. Shank, Jericho, VT (US);
James Albert Slinkman, Montpelier, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.