The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
May. 10, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Richard A. Phelps, Colchester, VT (US);
James A. Slinkman, Montpelier, VT (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/06 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/764 (2013.01);
Abstract
Semiconductor structures formed using a substrate that has a porous semiconductor layer and a device layer on the porous semiconductor layer. One or more trench isolation regions are formed in the device layer that surround an active device region. An opening is formed that extends through the one or more trench isolation regions to the porous semiconductor layer. A removal agent is directed through the opening to remove the porous semiconductor layer from a volume beneath the active device region and thereby form an air gap vertically beneath the active device region.