The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
May. 31, 2017
Globalfoundries Inc., Grand Cayman, KY;
Siva P. Adusumilli, South Burlington, VT (US);
Steven M. Shank, Jericho, VT (US);
Richard A. Phelps, Colchester, VT (US);
Anthony K. Stamper, Williston, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Structures for shallow trench isolation regions and methods for forming shallow trench isolation regions. A trench is etched partially through a device layer of a silicon-on-insulator substrate. A section of the device layer at a bottom of the trench is thermally oxidized to form a shallow trench isolation region in the trench. During the thermal oxidation, another region of the device layer may be concurrently oxidized over a partial thickness and, after removal of the oxide from this device layer region, used as a thinned silicon body. Prior to the thermal oxidation process, this device layer region may be implanted with an oxidation-retarding species that decreases its oxidation rate in comparison with the oxidation rate of the section of the device layer used to form the shallow trench isolation region.