The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Apr. 29, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Terence B. Hook, Jericho, VT (US);

Richard A. Phelps, Colchester, VT (US);

Anthony K. Stamper, Burlington, VT (US);

Renata A. Camillo-Castillo, Williston, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/5226 (2013.01); H01L 29/0649 (2013.01); H01L 29/7831 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to multiple back gate transistor structures and methods of manufacture. The structure includes: a transistor formed over a semiconductor material and an underlying substrate; and multiple isolated contact regions under a body or channel of the transistor, structured to provide a local potential to the body of the transistor at different locations.


Find Patent Forward Citations

Hook, Terence. (2017). Multiple back gate transistor (U.S. Patent No. 9761525). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9761525

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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