The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jul. 19, 2013
International Business Machines Corporation, Armonk, NY (US);
Frederick G. Anderson, South Burlington, VT (US);
Natalie B. Feilchenfeld, Jericho, VT (US);
David L. Harmon, Essex, VT (US);
Richard A. Phelps, Colchester, VT (US);
Yun Shi, South Burlington, VT (US);
Michael J. Zierak, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a Zener diode having a scalable reverse-bias breakdown voltage (V) as a function of the position of a cathode contact region relative to the interface between adjacent cathode and anode well regions. Specifically, cathode and anode contact regions are positioned adjacent to corresponding cathode and anode well regions and are further separated by an isolation region. However, while the anode contact region is contained entirely within the anode well region, one end of the cathode contact region extends laterally into the anode well region. The length of this end can be predetermined in order to selectively adjust the Vof the diode (e.g., increasing the length reduces Vof the diode and vice versa). Also disclosed are an integrated circuit, incorporating multiple instances of the diode with different reverse-bias breakdown voltages, a method of forming the diode and a design structure for the diode.