The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Aug. 01, 2013
International Business Machines Corporation, Armonk, NY (US);
Renata Camillo-Castillo, Essex Junction, VT (US);
Erik M. Dahlstrom, Los Altos, CA (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Ephrem G. Gebreselasie, South Burlington, VT (US);
Richard A. Phelps, Colchester, VT (US);
Yun Shi, South Burlington, VT (US);
Andreas D. Stricker, Milpitas, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include a SCR with an anode, a cathode, a first region, and a second region of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer is positioned on a top surface of a semiconductor substrate relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.