The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Sep. 03, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Natalie B. Feilchenfeld, Jericho, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/08 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01); H01L 29/165 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 27/0814 (2013.01); H01L 29/0649 (2013.01); H01L 29/165 (2013.01); H01L 29/66136 (2013.01); H01L 29/868 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01);
Abstract
Lateral PiN diodes and Schottky diodes with low parasitic capacitance and variable breakdown voltage structures and methods of manufacture are disclosed. The structure includes a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate.